Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Liu Yuan^a), Chen Hai-Bo^b), Liu Yu-Rong^c), Wang Xin^d), En Yun-Fei^a), Li Bin^c), Lu Yu-Dong†^a)

Back gate transfer characteristics in the PD-SOI devices with four types of buried oxides.