Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Liu Yuana), Chen Hai-Bob), Liu Yu-Rongc), Wang Xind), En Yun-Feia), Li Binc), Lu Yu-Dong†a)
       
Plots of normalized noise versus channel current under back gate operation in the SOI devices before and after radiation up to 1 M rad(Si).