Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide
Liu Yuana), Chen Hai-Bob), Liu Yu-Rongc), Wang Xind), En Yun-Feia), Li Binc), Lu Yu-Dong†a)
       
Plots of extracted Hooge’s parameter ( α H) versus overdrive voltage ( V bg− V th) in the back gate of SOI devices.