Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
Lü Kai, Jing Chen†, Luo Jie-Xin, He Wei-Wei, Huang Jian-Qiang, Chai Zhan, Wang Xi
       
Variations of g d values of TDBC, FB and TB devices, extract by Re ( Y 22), with V BG when frequency is 100 MHz, V G = 0.8 V and V D = 1.2 V.