Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

Lü Kai, Jing Chen†, Luo Jie-Xin, He Wei-Wei, Huang Jian-Qiang, Chai Zhan, Wang Xi

Variations of transconductance ( g _m) of FB and TB with back gate bias ( V _BG) when V _D =1.2 V and V _G=0.8 V, while g _m value of TDBC slightly increases as V _BG rises.