Silicene transistors— A review*
Quhe Ru-Gea),c),d)†, Wang Yang-Yanga),e)†, Lü Jing‡a),e)
       
Schematic model of silicene TFET. The yellow silicon atoms form a sheet of monolayer silicene. The source and drain are Ir (blue atoms)/Cu (red atoms) doped silicene and thus are p+/n+ type semiconductors with band gaps of about 0.3 eV and 0.2 eV, respectively. The central region, or the channel, is doped with Pt (black atoms) and thus is a neutral type semiconductor with a gap of around 0.3 eV. The concentration of the dopants in all parts of the device is fixed at 5.6% ( TM Si18, TM = Cu, Pt, and Ir). A 0.5-nm thick HfO2 dielectric region is placed over the channel. A thin h-BN buffer layer is included to protect the silicene from the oxide. Reproduced with permission from Ref. [ 14 ]. Copyright 2014 Royal Society of Chemistry.