Silicene transistors— A review
Quhe Ru-Gea), c), d) † , Wang Yang-Yanga), e) † , Lü Jing‡a), e) 
Silicene transistors— A review |
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Quhe Ru-Ge
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| Dual-gated silicene FET: (a) schematic model, (b) transmission spectra, and (c) projected density of states of the channel under different gate voltages and electric fields with a fixed V bias = 0.1 V, obtained from the GGA/SZ level. The dashed vertical line indicates the bias window. The channel length is ∼ 67 Å. The Fermi level is set to zero. (d) Transmission eigenstates for the off- and on-state ( V g = 0.2 V and 1 V, respectively) at E f and at the (0, 1/3) point of k -space under E ⊥ = 1 V/Å. The isovalues are 0.8 a.u. Reproduced with permission from Ref. [ 10 ]. Copyright 2012 American Chemical Society. |
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