Silicene transistors— A review
Quhe Ru-Gea), c), d) † , Wang Yang-Yanga), e) † , Lü Jing‡a), e) 
Silicene transistors— A review |
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Quhe Ru-Ge
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| (a)–(c) Band structures of silicene around E f at three different vertical electric fields. Inset in panel (a): band structures in the first Brillouin zone at E ⊥ = 0. The Fermi level or the valence band top is set to zero. (d) Dependence of band gap and charge transfer on the electric field. Adapted with permission from Ref. [ 10 ]. Copyright 2012 American Chemical Society. |
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