Silicene transistors— A review
Quhe Ru-Gea), c), d) † , Wang Yang-Yanga), e) † , Lü Jing‡a), e) 
Silicene transistors— A review |
|
Quhe Ru-Ge
|
| (a) Schematics of silicene and its synthesis–transfer fabrication process. (b) Drain current I d versus gate voltage V g curve displays the ambipolar electron–hole symmetry expected from silicene. (c) R versus gate overdrive voltage ( V g– V Dirac) of the silicene device. Measured transfer characteristics (dots) are in good agreement with a widely used ambipolar diffusive transport model (line). Reproduced with permission from Ref. [ 40 ]. Copyright 2015 Nature Publishing Group. |
| |