Silicene transistors— A review*
Quhe Ru-Gea),c),d)†, Wang Yang-Yanga),e)†, Lü Jing‡a),e)
       
(a) A gated two-probe model constructed by an optimized 6-ASiNR connected to the 4-ZSiNR electrodes. The channel length is 4.62 nm. Yellow balls: Si; white balls: H. (b) Calculated transfer characteristics ( V bias = 0.02 V) of a 6-ASiNR ( L = 9.89 nm) FET. (c) Calculated output characteristic of a 6-ASiNR ( L = 9.89 nm) FET. The gate voltage varies from -0.5 V to -3.0 V in steps of 0.5 V. Reproduced with permission from Ref. [ 32 ]. Copyright 2012 Springer International Publishing AG.