Theoretical study of the effects of vacancy and oxygen impurity on Ti
2
GaC)
Chen Jun-Jun
a)
, Duan Ji-Zheng
b)
, Zhao Da-Qiang
a)
, Zhang Jian-Rong
b)
, Yang Yang
a)
, Duan Wen-Shan†
a)
The PDOS and TDOS of defect-free Ti
2
GaC: panel (a) is the result of DFT calculation, panel (b) is the result of DFT+ U calculation.