Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Lv Yuan-Jie†^a), Feng Zhi-Hong^a), Gu Guo-Dong^a), Yin Jia-Yun^a), Fang Yu-Long^a), Wang Yuan-Gang^a), Tan Xin^a), Zhou Xing-Ye^a), Lin Zhao-Jun^a), Ji Zi-Wu^b), Cai Shu-Jun^a)

Relationships between the electron mobility of the 2DEG and the applied gate bias at room temperature for the prepared AlGaN/AlN/GaN HFETs with 22 nm (a) and 12 nm (b) AlGaN barrier layers, respectively.