Hetero-epitaxy of <em> L</em><sub>g</sub> = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Hetero-epitaxy of L_g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Huang Jie†^a), Li Ming‡^b), Zhao Qian^c), Gu Wen-Wen^a), Lau Kei-May^b)

(a) Current gain and MSG/MAG as a function of frequency for a 0.13 μm×100-μm mHEMT ( V _DS=1.0 V, V _GS = −0.1 V). (b) Small-signal characteristic of a 0.13 μm×100-μm mHEMT with V _GS varying from −0.8 V to 0.4