Hetero-epitaxy of <em> L</em><sub>g</sub> = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Hetero-epitaxy of L_g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Huang Jie†^a), Li Ming‡^b), Zhao Qian^c), Gu Wen-Wen^a), Lau Kei-May^b)

DC characteristics of a 0.13 μm×100 μm mHEMT: (a) I – V characteristics and (b) transfer characteristics.