Hetero-epitaxy of <em> L</em><sub>g</sub> = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Hetero-epitaxy of L_g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Huang Jie†^a), Li Ming‡^b), Zhao Qian^c), Gu Wen-Wen^a), Lau Kei-May^b)

(a) AFM image of a typical mHEMT structure, and (b) TEM cross-section micrograph of T-shaped gate