Hetero-epitaxy of <em> L</em><sub>g</sub> = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Hetero-epitaxy of L_g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

Huang Jie†^a), Li Ming‡^b), Zhao Qian^c), Gu Wen-Wen^a), Lau Kei-May^b)

(a) Nominal structure of mHEMT device on Si substrate, (b) TEM cross-section micrograph of mHEMT structure (note: panels (a) and (b) are not drawn to scale), (c) simulated band diagram and electron distribution of the mHEMT with quantum well structure.