Charge trapping behavior and its origin in Al2O3/SiC MIS system
Liu Xin-Yua), Wang Yi-Yua), Peng Zhao-Yanga), Li Cheng-Zhanb), Wu Jiab), Bai Yuna), Tang Yi-Dana), Liu Ke-Anb), Shen Hua-Jun†a)
       
C – V hysteresis as a function of oxide thickness for Al2O3/SiC MIS capacitors.