Charge trapping behavior and its origin in Al
2
O
3
/SiC MIS system
Liu Xin-Yu
a)
, Wang Yi-Yu
a)
, Peng Zhao-Yang
a)
, Li Cheng-Zhan
b)
, Wu Jia
b)
, Bai Yun
a)
, Tang Yi-Dan
a)
, Liu Ke-An
b)
, Shen Hua-Jun†
a)
Bi-direction C – V curves for MIS capacitors with an E
max
value of 4.26 MV/cm (gate swings from −5 V to V
max
and then back to −5 V).