Charge trapping behavior and its origin in Al2O3/SiC MIS system
Liu Xin-Yua), Wang Yi-Yua), Peng Zhao-Yanga), Li Cheng-Zhanb), Wu Jiab), Bai Yuna), Tang Yi-Dana), Liu Ke-Anb), Shen Hua-Jun†a)
       
Bi-direction C – V curves for MIS capacitors with an E max value of 4.26 MV/cm (gate swings from −5 V to V max and then back to −5 V).