Charge trapping behavior and its origin in Al
2
O
3
/SiC MIS system
Liu Xin-Yu
a)
, Wang Yi-Yu
a)
, Peng Zhao-Yang
a)
, Li Cheng-Zhan
b)
, Wu Jia
b)
, Bai Yun
a)
, Tang Yi-Dan
a)
, Liu Ke-An
b)
, Shen Hua-Jun†
a)
Plot of the density of interface states as a function of the position in the band gap, calculated from G
P
/( ω S ) versus frequency data from Fig. 3 .