Charge trapping behavior and its origin in Al<sub>2</sub>O<sub>3</sub>/SiC MIS system

Charge trapping behavior and its origin in Al₂O₃/SiC MIS system

Liu Xin-Yu^a), Wang Yi-Yu^a), Peng Zhao-Yang^a), Li Cheng-Zhan^b), Wu Jia^b), Bai Yun^a), Tang Yi-Dan^a), Liu Ke-An^b), Shen Hua-Jun†^a)

Plot of the EOT versus t _ox for MIS capacitors with t _ox ranging from 12.9 nm∼50 nm.