Growth mechanism and modification of electronic and magnetic properties of silicene

Liu Hong-Sheng, Han Nan-Nan, Zhao Ji-Jun†

Geometries and formation energies of various point defects in silicene: (a) SW; (b) SV-1 by (55|66) rings; (c) SV-2 with three dangling atoms; (d) DV-1 (5|8|5); (e) reconstructed DV-2 (555|777); (f) Si adatom.^{[ 56 ]}