Growth mechanism and modification of electronic and magnetic properties of silicene
Liu Hong-Sheng, Han Nan-Nan, Zhao Ji-Jun†
Growth mechanism and modification of electronic and magnetic properties of silicene |
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Liu Hong-Sheng, Han Nan-Nan, Zhao Ji-Jun†
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| Top views and side views of (a) planar monolayers of TiSi2, CrSi2, MnSi2, and FeSi2; (b) buckled monolayers of VSi2, NbSi2, and MoSi2. The blue or red balls represent transition metal atoms and the yellow balls represent silicon atoms. The black rectangle represents the unit cell. The values of buckled height ( d ) for VSi2, NbSi2, and MoSi2 are 0.289, 0.756, and 0.647 Å respectively.[ 117 ] |
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