Modulation of electronic properties with external fields in silicene-based nanostructures
Li Genga), b) , Zhao Yin-Changa), b) , Zheng Ruia), b) , Ni Jun†a), b) 
, Wu Yan-Ningc)
, Wu Yan-Ning
Modulation of electronic properties with external fields in silicene-based nanostructures |
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Li Geng
, Wu Yan-Ning |
| (a) Structures of a Christmas-tree silicene nanoribbon (CSiNR) (top) and a tree-saw silicene nanoribbon (TSiNR) (bottom). ( n 1, n 2) denotes the size of the structures. The unit cells are marked by the gray rectangle lines. The downward bold gray (green) arrow labels the transverse electric field E ext applied across the CSiNR. (b) The formation energies versus the value of N Si/ N H ( N C/ N H) for silicene nanoribbons (graphene nanoribbons). The square, circle, del, and triangular lines represent the E f of ASiNRs (AGNRs), ZSiNRs (ZGNRs), CSiNRs (CGNRs), and TSiNRs (TGNRs), respectively.[ 68 ] |
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