Modulation of electronic properties with external fields in silicene-based nanostructures

Li Geng^a),^b), Zhao Yin-Chang^a),^b), Zheng Rui^a),^b), Ni Jun†^a),^b), Wu Yan-Ning^c)

(a) The band structure of ASiSL (7, 9; s ₁, 3) with increasing s ₁ from 3 to 10. (b) The Bloch states of the edge state of ASiSL (7, 9; 3, 3) and ASiSL (7, 9; 5, 3) at the Γ point of the Brillouin zone are displayed, respectively. (c) The variation of the band gaps of the ASiSL (7, 9; s ₁, 3) from s ₁ = 3 to 10. (d) The variation of the gaps of the ASiSL (7, 9; 3, s ₂) from s ₂ = 3 to 9.^{[ 78 ]}