Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene
Hu Bo†
Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene |
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Hu Bo†
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| Calculated conductivity σ and the corresponding interlayer asymmetry | U | as a function of V g0 for different scaled n dt/ n d=0∼1.0 at T =10 K. |
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