Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene
Hu Bo†
Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene |
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Hu Bo†
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| Calculated conductivity σ and the corresponding interlayer asymmetry | U | as a function of V g0 for different n K values of 0.1×1012 cm−2 and 3.9×1012 cm−2 at T =10 K. For comparison the results obtained by neglecting either charged impurity-induced band gap or electron–hole puddles are also shown. |
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