Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene
Hu Bo†
Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene |
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Hu Bo†
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| Calculated conductivity σ as a function of ( V g0) for different n K=0.1,1.6,3.9,5.3×1012 cm−2 at T =10 K (lines) and comparison with experimental data from Ref. [ 21 ] (symbols). The inset gives the corresponding fitting value of Δ used in the conductivity calculations for different n K. |
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