Chemical modification of silicene
Wang Ronga) , Xu Ming-Shengb) , Pi Xiao-Dong†c) 
Chemical modification of silicene |
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Wang Rong
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| (a) Schematic diagram of an FET based on half-hydrogenated silicene. The gate dielectric material is SiO2, and h-BN is the buffer layer. The electrodes are made of semi-infinite silicene. The channel of half-hydrogenated silicene is 31.52-Å long. (b) Calculated transfer characteristic at a bias voltage of 0.2 V for the FET. (c) Spin-polarized transmission spectra with a gate voltage of 1.9 V. The bias voltage is fixed at 0.2 V. Red (blue) line represents the spin down (up). The inset shows the schematic plot of the Fermi energy level shift with the gate voltage.[ 33 ] |
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