Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells
H R Hamedia) 
, M R Mehmannavazb) , Hadi Afsharic)
, M R Mehmannavaz
Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells |
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H R Hamedi
, M R Mehmannavaz |
| (a) Cross section of GaAs/AlGaAsSDQW structure. (b) Schematic band diagram of a single period of the GaAs modulation-doped quantum well structure separated by an Al0.33 Ga0.67 As barrier. (c) Schematic setup of unidirectional ring cavity containing a SDQW sample of length L , and are the incident and the transmitted probe fields, respectively. |
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