Plasma induced by pulsed laser and fabrication of silicon nanostructures

Hang Wei-Qi†^a), Dong Tai-Ge^b), Wang Gang^b), Liu Liu Shi-Rong^b), Huang Zhong-Mei^a), Miao Xin-Jian^a), Lv Quan^c), Qin Chao-Jian^b)

(a) TEM image of Si nanostructure oxidized. (b) Optical image of hole-net structure prepared by the plasmonic standing wave induced by ns-pulsed laser at 355 nm in the cavity, in which the inset shows qunatum dot on nanosilicon in net-hole structure. (c) Raman scattering spectra, in which the curve B is the standard Raman spectrum on bulk silicon, and the curve C relates to the Si nanostructure.