Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

Chen Hai-Feng†, Guo Li-Xin, Zheng Pu-Yang, Dong Zhao, Zhang Qian

(a) Variations of gate-modulated generation current ( I _GMG) with V _DG, and (b) variations of gate-modulated recombination current ( I _GMR) with V _DG.