Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
Chen Hai-Feng†, Guo Li-Xin, Zheng Pu-Yang, Dong Zhao, Zhang Qian
       
Comparison of the experimental I DMG (symbol line) and simulated I DMG (dash line) based on Fig.  2(b) . Here, w / l = 6 μm/0.35 μm. N it = 2 × 1011 cm−2, and σ = 4 × 10−13 cm−2. Other structure parameters are the same as those in Fig.  2(b) .