Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
Chen Hai-Feng†, Guo Li-Xin, Zheng Pu-Yang, Dong Zhao, Zhang Qian
       
(a) A schematic diagram of the relationship between V D and g . (b) Curves of the simulated g versus V D. In the simulation, t ox = 4 nm and p 0 = N A = 4 × 1015 cm−3, m = 1.25 and V FB = −0.35 V.