Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Huang Jie†a) 
, Li Ming‡b) , Lau Kei-Mayc)
, Li Ming‡, Lau Kei-May
Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD |
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Huang Jie†
, Li Ming‡, Lau Kei-May |
| (a), (b) Dependence of AlInAs/GaInAs mHEMT V th on CF4 plasma power. (c) Reverse- and forward-baised gate current of AlInAs/GaInAs mHEMTs with different CF4 plasma treatments. |
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