Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Huang Jie†
a)
, Li Ming‡
b)
, Lau Kei-May
c)
The SIMS measurements of (a) sample a (without CF
4
treatment) and (b) sample b (CF
4
treatment: 150 W/150 s).