Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Huang Jie†
a)
, Li Ming‡
b)
, Lau Kei-May
c)
The AFM picture of (a) sample a (without CF4 treatment) and (b) sample b (CF
4
treatment: 150 W/150 s).