Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD
Huang Jie†a), Li Ming‡b), Lau Kei-Mayc)
       
(a) Nominal structure of mHEMT device on Si substrate (LT: low temperature; HT: high temperature. Note that the figure is not drawn to scale). (b) TEM cross-section micrograph of mHEMT buffer structure.