Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates

Yu Lei^a), Zhang Yuan-Wen^a), Li Kai^a), Pi Hui^a), Diao Jia-Sheng^a), Wang Xing-Fu^a), Hu Wen-Xiao^a), Zhang Chong-Zhen^a), Song Wei-Dong^a), Shen Yue^a), Li Shu-Ti†^a),^b)

The distribution of electron concentration (a), hole concentration (b), radiative recombination rate (c), and polarization electrostatic field (d) of InGaN/GaN MQWs at 180 mA injection current for polar (A), semi-polar (B), and non-polar (C) structure InGaN/GaN LEDs.