Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates
Yu Leia), Zhang Yuan-Wena), Li Kaia), Pi Huia), Diao Jia-Shenga), Wang Xing-Fua), Hu Wen-Xiaoa), Zhang Chong-Zhena), Song Wei-Donga), Shen Yuea), Li Shu-Ti†a),b)
       
The energy band diagrams (a) and electron leakage current (b) at 180 mA injection current for polar (A), semi-polar (B), and non-polar (C) structure InGaN/GaN LEDs.