Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors<xref ref-type="fn" rid="cpb150198fn1">*</xref>

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors*

Qian Hui-Min^a),^b), Yu Guang^a),^b), Lu Hai†^a),^b), Wu Chen-Fei^a),^b), Tang Lan-Feng^a),^b), Zhou Dong^a),^b), Ren Fang-Fang^a),^b), Zhang Rong^a),^b), Zheng You-Liao^a),^b), Huang Xiao-Ming^c)

Schematic energy band diagram of (a) the stress process and (b) the recovery process. Here, E _c is the conduction band minimum, E _f is the Fermi level, and E _v is the valence band maximum.