Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors*
Qian Hui-Mina),b), Yu Guanga),b), Lu Hai†a),b), Wu Chen-Feia),b), Tang Lan-Fenga),b), Zhou Donga),b), Ren Fang-Fanga),b), Zhang Ronga),b), Zheng You-Liaoa),b), Huang Xiao-Mingc)
       
(a) Time dependence of V th shift at different recovery temperatures. The measured data are well fitted with a stretched-exponential equation. (b) Recovery time constant ln τ as a function of reciprocal temperature.