Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors*
Qian Hui-Mina),b), Yu Guanga),b), Lu Hai†a),b), Wu Chen-Feia),b), Tang Lan-Fenga),b), Zhou Donga),b), Ren Fang-Fanga),b), Zhang Ronga),b), Zheng You-Liaoa),b), Huang Xiao-Mingc)
       
Transfer characteristics of the a-IGZO TFT at 70 °C as a function of recovery time after 3000 s PBS at 30 V.