Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors<xref ref-type="fn" rid="cpb150198fn1">*</xref>

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors*

Qian Hui-Min^a),^b), Yu Guang^a),^b), Lu Hai†^a),^b), Wu Chen-Fei^a),^b), Tang Lan-Feng^a),^b), Zhou Dong^a),^b), Ren Fang-Fang^a),^b), Zhang Rong^a),^b), Zheng You-Liao^a),^b), Huang Xiao-Ming^c)

Transfer characteristics of the a-IGZO TFT at 70 °C as a function of recovery time after 3000 s PBS at 30 V.