Modulation of WN<sub><em> x</em></sub>/Ge Schottky barrier height by varying N composition of tungsten nitride<xref ref-type="fn" rid="cpb143144fn1">*</xref>

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride*

Wei Jiang-Bin^a), Chi Xiao-Wei^a), Lu Chao^a), Wang Chen^a), Lin Guang-Yang^a), Wu Huan-Da^a), Huang Wei†^a), Li Cheng‡^a), Chen Song-Yan^a), Liu Chun-Li^b)

J – V characteristics of the WN_x/Ge films formed with different Ar/N₂ flow rate ratios. (a) WN_x/p-Ge (b) WN_x/n-Ge.