Modulation of WN<sub><em> x</em></sub>/Ge Schottky barrier height by varying N composition of tungsten nitride<xref ref-type="fn" rid="cpb143144fn1">*</xref>

Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride*

Wei Jiang-Bin^a), Chi Xiao-Wei^a), Lu Chao^a), Wang Chen^a), Lin Guang-Yang^a), Wu Huan-Da^a), Huang Wei†^a), Li Cheng‡^a), Chen Song-Yan^a), Liu Chun-Li^b)

XPS spectra of W 4f and N 1s for the WN_x films prepared with different Ar/N₂ flow rates. (a) W 4f, Ar : N₂ = 50 : 18, (b) N 1s, Ar : N₂ = 50 : 18, (c) W 4f, Ar : N₂ = 50 : 25, (d) N 1s, Ar : N₂ = 50 : 25, (e) W 4f, Ar : N₂ = 50 : 35, (f) N 1s, Ar : N₂ = 50 : 35.