Modulation of WN x/Ge Schottky barrier height by varying N composition of tungsten nitride*
Wei Jiang-Bina), Chi Xiao-Weia), Lu Chaoa), Wang Chena), Lin Guang-Yanga), Wu Huan-Daa), Huang Wei†a), Li Cheng‡a), Chen Song-Yana), Liu Chun-Lib)
       
θ –2 θ XRD scan of the WN x film formed at different N2 flow rates from 0 to 35 sccm.