Modulation of WN
x
/Ge Schottky barrier height by varying N composition of tungsten nitride
*
Wei Jiang-Bin
a)
, Chi Xiao-Wei
a)
, Lu Chao
a)
, Wang Chen
a)
, Lin Guang-Yang
a)
, Wu Huan-Da
a)
, Huang Wei†
a)
, Li Cheng‡
a)
, Chen Song-Yan
a)
, Liu Chun-Li
b)
θ –2 θ XRD scan of the WN
x
film formed at different N
2
flow rates from 0 to 35 sccm.