A novel physical parameter extraction approach for Schottky diodes*
Wang Hao, Chen Xing†, Xu Guang-Hui, Huang Ka-Ma
       
(a) Schematic diagram of a two-port microstrip circuit. (b) Photo of the fabricated circuit for extracting the parasitic inductances of the HSMS-282c Schottky diode. (Physical dimensions: w 1 = 31.1 mm, w 2 = 2.75 mm, w 3 = 1.1 mm, and h = 1 mm. Relative permittivity of substrate: ε r = 2.55).