Energy distribution extraction of negative charges responsible for positive bias temperature instability*
Ren Shang-Qing†, Yang Hong, Wang Wen-Wu‡, Tang Bo, Tang Zhao-Yun, Wang Xiao-Lei, Xu Hao, Luo Wei-Chun, Zhao Chao, Yan Jiang, Chen Da-Peng, Ye Tian-Chun
       
(a) Three cycles of stressing and recovery are shown and no additional degradation appears. (b) During stressing, the leakage of the gate electrode ( I g) decreases monotonously. (c) PBTI degradation can completely recover under a proper negative stress for an adequate period of time. (d) The threshold voltage decreases negatively when a larger negative stress is applied during the recovery phase.