High performance trench MOS barrier Schottky diode with high- k gate oxide*
Zhai Dong-Yuana),b), Zhu Junb), Zhao Yi†a),c), Cai Yin-Feid), Shi Yib), Zheng You-Liaob)
       
Electric field intensity distributions of the conventional SiO2 TMBS, the conventional HfO2 TMBS, and the high- k TMBS at reverse voltage of 40 V. Inset shows the line 0.01 μm away from the trench edge along which these electric field intensity distributions are plotted.