High performance trench MOS barrier Schottky diode with high-
k
gate oxide
*
Zhai Dong-Yuan
a),
b)
, Zhu Jun
b)
, Zhao Yi†
a),
c)
, Cai Yin-Fei
d)
, Shi Yi
b)
, Zheng You-Liao
b)
Reverse I – V curves of the conventional SiO
2
TMBS, the conventional HfO
2
TMBS, and the high- k TMBS.