Theoretical investigation of sulfur defects on structural, electronic, and elastic properties of ZnSe semiconductor

Zafar Muhammad†^a), Ahmed Shabbir^a), Shakil M.^a), Choudhary M. A.^a), Mahmood K.^b)

Total and partial DOSs of ZnSe_{1− x}S_x at x = 0.00 (a), 0.25 (b), 0.50 (c), 0.75 (d), and 1.00 (e), each as a function of sulfur composition.